Research Prime

Rese­arch Asso­ciate (m/f/x)
Organisation Name: TECHNISCHE UNIVERSITAT DRESDEN (TU DRESDEN)
Organisation Type:
City: Berlin
State:
Country: Germany

Job Description:

Rese­arch Asso­ciate (m/f/x)

(sub­ject to per­sonal qual­i­fic­a­tion employ­ees are remu­ner­ated accord­ing to salary group E 13 TV-L)

At TU Dresden, Fac­ulty of Elec­trical and Com­puter Engin­eer­ing, Insti­tute of Cir­cuits and Sys­tems the Chair of Elec­tron Devices and Integ­rated Cir­cuits (CEDIC) offers a pro­ject pos­i­tion start­ing as soon as pos­sible. The pos­i­tion is lim­ited for 36 months with the option of exten­sion sub­ject to fur­ther third-party fun­ded pro­jects. The period of employ­ment is gov­erned by § 2 (2) Fixed Term Research Con­tracts Act (Wis­senschaft­szeitver­trags­ge­setz - Wis­sZeitVG).

CEDIC has been an inter­na­tion­ally recog­nized research group in the area of device mod­el­ing for high-fre­quency (HF) applic­a­tions, with sig­ni­fic­ant con­tri­bu­tions in par­tic­u­lar to the the­or­et­ical under­stand­ing and explor­a­tion of high-fre­quency per­form­ance and phys­ical lim­its of het­ero­junc­tion bipolar tran­sist­ors and car­bon nan­otube based field-effect tran­sist­ors (CNT­FETs) as well as to the devel­op­ment of related mod­els and tools for cir­cuit design. CEDIC has also been involved in vari­ous research pro­jects fun­ded by the Ger­man National Sci­ence Found­a­tion (DFG), Ger­man Fed­eral gov­ern­ment, the European Union and DARPA.

Working field:

The suc­cess­ful can­did­ate is expec­ted to con­trib­ute to a DFG fun­ded research pro­ject on the elec­trical char­ac­ter­iz­a­tion and mod­el­ing of CNT­FETs. Spe­cific tasks com­prise: (i) Elec­trical char­ac­ter­iz­a­tion of break­down in CNT­FETs with dif­fer­ent chan­nel form­a­tion meth­ods (CVD, dis­per­sion), dif­fer­ent gate oxide mater­i­als (HfO2, Al2O3), and dif­fer­ent sub­strate mater­i­als (SiO2, quartz). (ii) Devel­op­ment of a the­or­et­ical under­stand­ing of the break­down mech­an­isms rel­ev­ant for tran­sistor based elec­tron­ics and, using tran­sist­ors and other test struc­tures, determ­in­a­tion of rel­ev­ant mater­ial para­met­ers for device mod­el­ing (TCAD). (iii) Devel­op­ment and design of test struc­tures for com­pact model para­meter extrac­tion. (iv) Numer­ic­ally effi­cient and stable exten­sion of our exist­ing com­pact mod­els by phys­ics-based for­mu­la­tions for the invest­ig­ated break­down mech­an­isms, enabling the invest­ig­a­tion of the impact of CNT­FET break­down on the per­form­ance of HF cir­cuits. (v) Exper­i­mental com­pact model veri­fic­a­tion. The work requires a strong cooper­a­tion within a team of research­ers at CEDIC and at cooper­a­tion part­ners. Par­ti­cip­a­tion in research pro­ject related pro­gress reports, present­a­tions at pro­ject meet­ings and pub­lic­a­tions is also expec­ted.

Requirements:

Applic­ants should hold an out­stand­ing uni­versity degree (Mas­ter/Dipl.-Ing.) in elec­trical engin­eer­ing. Hands-on exper­i­ence in the fol­low­ing areas is man­dat­ory: DC and S-para­meter on-wafer exper­i­mental char­ac­ter­iz­a­tion of elec­tronic devices; MOS­FET the­ory and mod­el­ing; model imple­ment­a­tion in stand­ard com­mer­cial cir­cuit sim­u­lat­ors (prefer­ably via Ver­i­log-A); com­pact model para­meter extrac­tion. Addi­tional know­ledge in CNT­FET oper­a­tion prin­ciples and a good know­ledge on semi­con­ductor fun­da­ment­als will be a pre­requis­ite for a suc­cess­ful applic­a­tion. Excel­lent Eng­lish lan­guage and com­mu­nic­a­tion skills are highly desired.

How to apply:

Applic­a­tions from women are par­tic­u­larly wel­come. The same applies to people with dis­ab­il­it­ies.

Your applic­a­tion (in Eng­lish only) should include: motiv­a­tion let­ter, CV with descrip­tion of com­pleted pro­jects in the areas described above, tran­script of grades (i.e. the offi­cial list of course­work includ­ing your grades) and proof of Eng­lish lan­guage skills. Please sub­mit your com­pre­hens­ive applic­a­tion by Feb­ru­ary 18, 2022 (stamped arrival date of the uni­versity cent­ral mail ser­vice applies), prefer­ably via the TU Dresden Secure­Mail Portal https://securemail.tu-dresden.de quot­ing “Research Asso­ci­ate applic­a­tion w561” in the sub­ject header by send­ing it as a single pdf doc­u­ment to michael.schroeter@tu-dresden.de or by mail to: TU Dresden, Fak­ultät Elektro­tech­nik und Inform­a­tion­s­tech­nik, Insti­tut für Grundla­gen der Elektro­tech­nik und Elektronik, Pro­fes­sur für Elektron­is­che Bauele­mente und Integ­rierte Schal­tun­gen, Herrn Prof. Michael Schröter, Helm­holtz­str. 10, 01069 Dresden. Please sub­mit cop­ies only, as your applic­a­tion will not be returned to you. Expenses incurred in attend­ing inter­views can­not be reim­bursed.

Ref­er­ence to data pro­tec­tion: Your data pro­tec­tion rights, the pur­pose for which your data will be pro­cessed, as well as fur­ther inform­a­tion about data pro­tec­tion is avail­able to you on the web­site: https://tu-dresden.de/karriere/datenschutzhinweis.

Posting Date: Dec 24, 2021
Closing Date:
Organisation Website/Careers Page: https://tud.stellenticket.de/en/offers/117880/?search%5Bfulltextsearch%5D=Research+Associate&namespace=jobs_science


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